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| IRF620S Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A D Drain G Gate Source S N Channel ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Symbol Symbol Parameter Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage Test Conditions VDS = 200VDC, VGS = 0VDC VDS = 160VDC, VGS = 0VDC Tj=125 C VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250A Value Min 200 Typ Max Unit Volt A nA nA Volt V(BR)DSS VGS = 0 VDC, ID = 250A IDSS IGSS VGS(th) 2.0 x x 260 100 30 7.2 19 22 13 25 250 100 -100 4.0 0.80 14 3.0 7.9 Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 3.1A Gate Charge Gate to Source Charge Gate to Drain Charge Input Capacitance Output Capacitance Transfer Capacitance Turn On Delay Time Turn Off Delay Time Rise Time Fall Time Continuous Source Current Pulsed Source Current Forward Voltage (Diode) QG QGS QGD CISS COSS CRSS td(on) td(off) tr tf IS ISM VSD VGS = 0VDC, IS =5.2A, Tp = 300S VDD = 100VDC, ID = 4.8A, RG =18 RD = 20 VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ ID = 4.8A VDS = 160VDC, VGS = 10VDC - nC nC nC pF pF pF nS nS nS nS A A V 5.2 18 1.8 - MAXIMUM RATINGS Parameter Gate to Source Voltage Drain to Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissapation Thermal Resistance (Junction to Ambient) (Tj = 25 C unless stated otherwise) Symbol Condition VGS VDSS ID IDM PD RTH (J-A) (TA = 25 C) Value +/- 20V 200 5.2 18 50 62 Unit Volt Volt Amp Amp W C/W Maximum Operating Temperature Range (Tj) -55 to +150 OC Maximum Storage Temperature Range (Tstg) -55 to +150 OC Mechanical Dimensions Dim a b c d e f g h j k m n p DIMENSIONS Millimetres Inches Min Max Min Max 9.85 14.61 8.51 1.27 4.08 1.14 1.15 1.78 0.38 0.51 0.51 10.67 15.88 1.65 9.65 1.78 4.83 1.40 1.400 2.79 0.77 0.99 0.89 0.380 0.575 0.335 0.050 0.180 0.045 0.045 0.070 0.015 0.020 0.020 0.420 0.625 0.065 0.380 0.070 0.190 0.055 0.055 0.110 0.029 0.038 0.35 a c f g b d m n p e k j 2.54 Pitch 0.10 Pitch Case SMB 220 Plastic |
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